标题: | 不同型掺杂材料浮动闸极快闪式记忆元件可靠性问题之研究 A Study on the Reliability Issues of Flash EEPROM with Different Floating Gate Materials |
作者: | 庄绍勋 Chung Steve S 国立交通大学电子工程学系 |
关键字: | 快闪式记忆体;可靠度;浮动闸;资料持久力;氧化层伤害;Frash memory;Reliability;Floating gate;Data retention;Oxide damage |
公开日期: | 2000 |
官方说明文件#: | NSC89-2218-E009-110 |
URI: | http://hdl.handle.net/11536/93274 https://www.grb.gov.tw/search/planDetail?id=619835&docId=115468 |
显示于类别: | Research Plans |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.