Title: | 不同型摻雜材料浮動閘極快閃式記憶元件可靠性問題之研究 A Study on the Reliability Issues of Flash EEPROM with Different Floating Gate Materials |
Authors: | 莊紹勳 Chung Steve S 國立交通大學電子工程學系 |
Keywords: | 快閃式記憶體;可靠度;浮動閘;資料持久力;氧化層傷害;Frash memory;Reliability;Floating gate;Data retention;Oxide damage |
Issue Date: | 2000 |
Gov't Doc #: | NSC89-2218-E009-110 |
URI: | http://hdl.handle.net/11536/93274 https://www.grb.gov.tw/search/planDetail?id=619835&docId=115468 |
Appears in Collections: | Research Plans |
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