Title: 不同型摻雜材料浮動閘極快閃式記憶元件可靠性問題之研究
A Study on the Reliability Issues of Flash EEPROM with Different Floating Gate Materials
Authors: 莊紹勳
Chung Steve S
國立交通大學電子工程學系
Keywords: 快閃式記憶體;可靠度;浮動閘;資料持久力;氧化層傷害;Frash memory;Reliability;Floating gate;Data retention;Oxide damage
Issue Date: 2000
Gov't Doc #: NSC89-2218-E009-110
URI: http://hdl.handle.net/11536/93274
https://www.grb.gov.tw/search/planDetail?id=619835&docId=115468
Appears in Collections:Research Plans


Files in This Item:

  1. 892218E009110.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.