Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors (vol 177, pg 683, 2007)

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DC Field	Value	Language
dc.contributor.author	Chen, P. -Y.	en_US
dc.contributor.author	Shao, Y. -L.	en_US
dc.contributor.author	Cheng, K. -W.	en_US
dc.contributor.author	Hsu, K. -H.	en_US
dc.contributor.author	Wu, J. -S.	en_US
dc.contributor.author	Yu, J. -P.	en_US
dc.date.accessioned	2014-12-08T15:12:10Z	-
dc.date.available	2014-12-08T15:12:10Z	-
dc.date.issued	2008-05-15	en_US
dc.identifier.issn	0010-4655	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.cpc.2008.01.008	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9332	-
dc.language.iso	en_US	en_US
dc.title	Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors (vol 177, pg 683, 2007)	en_US
dc.type	Correction	en_US
dc.identifier.doi	10.1016/j.cpc.2008.01.008	en_US
dc.identifier.journal	COMPUTER PHYSICS COMMUNICATIONS	en_US
dc.citation.volume	178	en_US
dc.citation.issue	10	en_US
dc.citation.spage	794	en_US
dc.citation.epage	794	en_US
dc.contributor.department	機械工程學系	zh_TW
dc.contributor.department	Department of Mechanical Engineering	en_US
dc.identifier.wosnumber	WOS:000256733300008	-
dc.citation.woscount	0	-
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