標題: A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors
作者: Li, YM
Chou, HM
Lee, JW
Lee, BS
電子物理學系
友訊交大聯合研發中心
Department of Electrophysics
D Link NCTU Joint Res Ctr
關鍵字: carbon nanotube array;field effect transistor;top gate;warp around gate;bottom gate;electrostatic potential;gate capacitance;3D modeling;computer simulation
公開日期: 1-八月-2005
摘要: We, in this paper, study the electrostatic characteristics and the gate capacitances for carbon nanotube (CNT) array field effect transistors (FETs). The explored CNT-array FET is with three configurations of gate electrode, the top gate, the wrap around gate, and the bottom gate. Taking the pitch distance of structures and the gate length of CNT FET into consideration, a three-dimensional (3D) electrostatic simulation are performed by using an adaptive finite volume method, where different gate capacitance are calculated and compared. It is found that there is at least a 20% difference in calculating the gate capacitance between the 2D and 3D modeling and simulations. Our 3D simulation shows that a wrap around gate gives the largest gate capacitance among structures. A bottom gate possesses the weakest gate controllability. Effects of the pitch distance and the gate length on the gate capacitances of CNT-array FET are investigated. Results of the 3D electrostatic simulations can be applied to estimate the magnitude of the on-current of CNT FETs. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2005.03.044
http://hdl.handle.net/11536/13414
ISSN: 0167-9317
DOI: 10.1016/j.mee.2005.03.044
期刊: MICROELECTRONIC ENGINEERING
Volume: 81
Issue: 2-4
起始頁: 434
結束頁: 440
顯示於類別:會議論文


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