标题: | High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer |
作者: | Ling, H. S. Wang, S. Y. Lee, C. P. Lo, M. C. 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 12-五月-2008 |
摘要: | We demonstrate the high quantum efficiency InAs/In(0.15)Ga(0.85)As dots-in-a-well (DWELL) quantum dot infrared photodetectors (QDIPs). A thin Al(0.3)Ga(0.7)As layer was inserted on top of the InAs quantum dots (QDs) to enhance the confinement of QD states in the DWELL structure. The better confinement of the electronic states increases the oscillation strength of the infrared absorption. The higher excited state energy also improves the escape probability of the photoelectrons. Compared with the conventional DWELL QDIPs, the quantum efficiency increases more than 20 times and the detectivity is about an order of magnitude higher at 77 K. (c) 2008 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2926663 http://hdl.handle.net/11536/9336 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2926663 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 92 |
Issue: | 19 |
结束页: | |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.