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dc.contributor.authorYuan, C. T.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorChuu, D. S.en_US
dc.contributor.authorChen, Y. N.en_US
dc.contributor.authorLin, C. A.en_US
dc.contributor.authorChang, W. H.en_US
dc.date.accessioned2014-12-08T15:12:11Z-
dc.date.available2014-12-08T15:12:11Z-
dc.date.issued2008-05-05en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2921779en_US
dc.identifier.urihttp://hdl.handle.net/11536/9343-
dc.description.abstractPhotoinduced fluorescence enhancement (PFE) in colloidal CdSeTe/ZnS core/shell quantum dots (QDs) was investigated by monitoring ensemble fluorescence and single-QD fluorescence blinking behavior upon illumination. Ensemble fluorescence was increased in air and in vacuum with different enhanced factors. At the single-QD levels, fluorescence was also enhanced for some individual QDs. Relatively long on times, high quantum yields within the on times, and multilevel on states were found in fluorescence time traces. We suggest that the PFE origin from single-QD viewpoint is attributed to the contributions of surface passivation by photoinduced charged carriers and the formation of neutral core/charged shell QD states. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titlePhotoinduced fluorescence enhancement in colloidal CdSeTe/ZnS core/shell quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2921779en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume92en_US
dc.citation.issue18en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000256485700062-
dc.citation.woscount9-
Appears in Collections:Articles


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