Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer

標題:	Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer
作者:	Wu, Chi-Chang Wu, Wen-Fa Ko, Fu-Hsiang You, Hsin-Chiang Yang, Wen-Luh 材料科學與工程學系材料科學與工程學系奈米科技碩博班 Department of Materials Science and Engineering Graduate Program of Nanotechnology , Department of Materials Science and Engineering
公開日期:	5-五月-2008
摘要:	The thermal and morphological stability of NiSi is enhanced by inserting a polycrystalline (poly-Si) buffer layer between the Ni and poly-SiGe films. NiSi films formed on poly-Si/poly-SiGe stack layers possessed continuous, smooth structures after annealing at 500-850 degrees C. Moreover, nickel germanosilicide [Ni(Si, Ge)] lines formed on the poly-SiGe exhibited a fine-line effect, i.e., the sheet resistance increased upon decreasing the linewidth, whereas the sheet resistance of NiSi lines formed on the poly-Si/poly-SiGe stack layers remained less than 5 Omega/square. A model for the stress-confined grain growth and recrystallization is proposed to explain the improved properties of the poly-Si-buffered film. (c) 2008 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.2920202 http://hdl.handle.net/11536/9344
ISSN:	0003-6951
DOI:	10.1063/1.2920202
期刊:	APPLIED PHYSICS LETTERS
Volume:	92
Issue:	18
結束頁:
顯示於類別：	期刊論文

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