新世代鐵電非揮發性記憶元件(I)

Full metadata record

DC Field	Value	Language
dc.contributor.author	曾俊元	en_US
dc.contributor.author	TSEUNG-YUENTSENG	en_US
dc.date.accessioned	2014-12-13T10:35:27Z	-
dc.date.available	2014-12-13T10:35:27Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-100	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93453	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=676562&docId=129095	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	非揮發性記憶元件	zh_TW
dc.subject	鐵電記憶元件	zh_TW
dc.subject	新世代	zh_TW
dc.subject	Nonvolatile memory device	en_US
dc.subject	Ferroelectric memory device	en_US
dc.subject	Next generqation	en_US
dc.title	新世代鐵電非揮發性記憶元件(I)	zh_TW
dc.title	Next Generation Non-volatile Ferroelectric Memory(I)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans