Title: | 新世代鐵電非揮發性記憶元件(I) Next Generation Non-volatile Ferroelectric Memory(I) |
Authors: | 曾俊元 TSEUNG-YUENTSENG 國立交通大學電子工程學系 |
Keywords: | 非揮發性記憶元件;鐵電記憶元件;新世代;Nonvolatile memory device;Ferroelectric memory device;Next generqation |
Issue Date: | 2001 |
Gov't Doc #: | NSC90-2215-E009-100 |
URI: | http://hdl.handle.net/11536/93453 https://www.grb.gov.tw/search/planDetail?id=676562&docId=129095 |
Appears in Collections: | Research Plans |