新世代鐵電非揮發性記憶元件(I)

Title:	新世代鐵電非揮發性記憶元件(I) Next Generation Non-volatile Ferroelectric Memory(I)
Authors:	曾俊元 TSEUNG-YUENTSENG 國立交通大學電子工程學系
Keywords:	非揮發性記憶元件;鐵電記憶元件;新世代;Nonvolatile memory device;Ferroelectric memory device;Next generqation
Issue Date:	2001
Gov't Doc #:	NSC90-2215-E009-100
URI:	http://hdl.handle.net/11536/93453 https://www.grb.gov.tw/search/planDetail?id=676562&docId=129095
Appears in Collections:	Research Plans