等價位氮化物元件結構製備與相關物理特性研究(I)

Full metadata record

DC Field	Value	Language
dc.contributor.author	陳衛國	en_US
dc.contributor.author	WEI-KUOCHEN	en_US
dc.date.accessioned	2014-12-13T10:35:45Z	-
dc.date.available	2014-12-13T10:35:45Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2112-M009-044	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93578	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=639691&docId=119715	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	等價位氮化物	zh_TW
dc.subject	特性	zh_TW
dc.subject	元件	zh_TW
dc.subject	Isoelectronic nitride	en_US
dc.subject	Characterization	en_US
dc.subject	Device	en_US
dc.title	等價位氮化物元件結構製備與相關物理特性研究(I)	zh_TW
dc.title	Characterizations and Fabrications of Isoelectronic Doped Nitride Device Structures(I)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子物理學系	zh_TW
Appears in Collections:	Research Plans

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