氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析

Full metadata record

DC Field	Value	Language
dc.contributor.author	張翼	en_US
dc.date.accessioned	2014-12-13T10:35:54Z	-
dc.date.available	2014-12-13T10:35:54Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-103	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93649	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=660685&docId=125043	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氮化鎵族半導體	zh_TW
dc.subject	高功率電子元件	zh_TW
dc.subject	高頻	zh_TW
dc.subject	GaN semiconductor	en_US
dc.subject	High power electronic device	en_US
dc.subject	High frequency	en_US
dc.title	氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析	zh_TW
dc.title	High Power Electronic Devices Fabrication and High Frequency Characterization of Gallium Nitride Based Compound Semiconductors	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學材料科學與工程學系	zh_TW
Appears in Collections:	Research Plans

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