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dc.contributor.authorDesmaris, V.en_US
dc.contributor.authorShiu, J. Y.en_US
dc.contributor.authorRorsman, N.en_US
dc.contributor.authorZirath, H.en_US
dc.contributor.authorChang, E. Y.en_US
dc.date.accessioned2014-12-08T15:12:13Z-
dc.date.available2014-12-08T15:12:13Z-
dc.date.issued2008-05-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2007.10.022en_US
dc.identifier.urihttp://hdl.handle.net/11536/9376-
dc.description.abstractThe effects of the composition of oxynitride passivations (SiOxNy) deposited by plasma enhanced chemical-vapor deposition (PECVD) at room temperature on the microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. Five different SiOxNy passivating layers were deposited covering the whole range of dielectrics combinations from SiOx to SiNy. Their impacts on the HEMT performance were studied by means of DC, S-parameters, pulsed IV and load-pull measurements. The oxynitride dielectric with a refraction index of 1.58 was shown to be an effective SiOxNy passivation for limiting the gate-lag effects in the HEMTs and at the same time increasing the breakdown voltage of the device. It is thus a promising passivation layer for microwave power high voltage and high power applications. (c) 2007 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAlGaN/GaN HEMTsen_US
dc.subjectmicrowave FETsen_US
dc.subjectpassivationen_US
dc.subjecttransient analysisen_US
dc.titleInfluence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2007.10.022en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume52en_US
dc.citation.issue5en_US
dc.citation.spage632en_US
dc.citation.epage636en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000255581000006-
dc.citation.woscount6-
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