Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs

doi:10.1016/j.sse.2007.10.022

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DC 欄位	值	語言
dc.contributor.author	Desmaris, V.	en_US
dc.contributor.author	Shiu, J. Y.	en_US
dc.contributor.author	Rorsman, N.	en_US
dc.contributor.author	Zirath, H.	en_US
dc.contributor.author	Chang, E. Y.	en_US
dc.date.accessioned	2014-12-08T15:12:13Z	-
dc.date.available	2014-12-08T15:12:13Z	-
dc.date.issued	2008-05-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2007.10.022	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9376	-
dc.description.abstract	The effects of the composition of oxynitride passivations (SiOxNy) deposited by plasma enhanced chemical-vapor deposition (PECVD) at room temperature on the microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. Five different SiOxNy passivating layers were deposited covering the whole range of dielectrics combinations from SiOx to SiNy. Their impacts on the HEMT performance were studied by means of DC, S-parameters, pulsed IV and load-pull measurements. The oxynitride dielectric with a refraction index of 1.58 was shown to be an effective SiOxNy passivation for limiting the gate-lag effects in the HEMTs and at the same time increasing the breakdown voltage of the device. It is thus a promising passivation layer for microwave power high voltage and high power applications. (c) 2007 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	AlGaN/GaN HEMTs	en_US
dc.subject	microwave FETs	en_US
dc.subject	passivation	en_US
dc.subject	transient analysis	en_US
dc.title	Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2007.10.022	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	52	en_US
dc.citation.issue	5	en_US
dc.citation.spage	632	en_US
dc.citation.epage	636	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000255581000006	-
dc.citation.woscount	6	-
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