| 標題: | 砷沈積在低溫砷化鎵中的電性物理研究 What Roles as Precipitates Play in the Electrical Properties of Low Temperature GaAs |
| 作者: | 陳振芳 CHEN JENN-FANG 交通大學電子物理系 |
| 關鍵字: | 低溫砷化鎵;砷沈積;分子束磊晶;Low-temperature GeAs;As precipitates;Molecular beam epitaxy |
| 公開日期: | 2000 |
| 官方說明文件#: | NSC89-2112-M009-024 |
| URI: | http://hdl.handle.net/11536/93786 https://www.grb.gov.tw/search/planDetail?id=523665&docId=95106 |
| 顯示於類別： | 研究計畫 |
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- Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy / Hsieh, LZ;Huang, JH;Su, ZA;Wu, MC
- 應力與高濃度摻雜對低溫分子束磊晶生長砷化鎵的砷析出過程之影響 / 蘇晉德;Su, Zi-Ang;李威儀;黃金花;Lee, Wei-I
- Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy / Su, ZA;Huang, JH;Lee, WI
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