具有新式副閘極結構的低溫複晶矽薄膜電晶體的製作與分析

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DC Field	Value	Language
dc.contributor.author	黃調元	en_US
dc.contributor.author	TIAO-YUANHUANG	en_US
dc.date.accessioned	2014-12-13T10:36:19Z	-
dc.date.available	2014-12-13T10:36:19Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-104	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93860	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=583890&docId=109707	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	具有新式副閘極結構的低溫複晶矽薄膜電晶體的製作與分析	zh_TW
dc.title	Fabrication and Characterization of Low-Temperature Polysilicon Thin Film Transistors with Novel Self-Aligned Sub-Gate Structures	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans

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