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dc.contributor.authorChang, Chia-Wenen_US
dc.contributor.authorChen, Szu-Fenen_US
dc.contributor.authorChang, Che-Lunen_US
dc.contributor.authorDeng, Chih-Kangen_US
dc.contributor.authorHuang, Jiun-Jiaen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:12:14Z-
dc.date.available2014-12-08T15:12:14Z-
dc.date.issued2008-05-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2008.920977en_US
dc.identifier.urihttp://hdl.handle.net/11536/9392-
dc.description.abstractHigh-performance poly-Si thin-film transistors (TFTs) with 50-nm nanowire (NW) channels fabricated by integrating a simple spacer formation scheme and metal-induced-lateral-crystallization (MILC) technique are proposed. By using the sidewall spacer formation scheme, the NW channels with nanometer-scale feature sizes can be easily fabricated, exhibiting superior channel controllability through the triple-gate structure. In employing the MILC technique, the grain crystallinity of NW channels is significantly superior to that formed by the solid-phase-crystallization (SPC) technique. Therefore, the MILC NW TFT exhibits greatly improved electrical performances, including lower threshold voltage, steeper subthreshold swing, and higher field-effect mobility, as compared to those of the SPC NW TFT. Moreover, the superior threshold-voltage rolloff characteristics of MILC NW TFT are also demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectmetal-induced lateral crystallization (MILC)en_US
dc.subjectnanowires (NWs)en_US
dc.subjectthin-film transistors (TFTs)en_US
dc.subjecttriple-gate structureen_US
dc.titleHigh-performance nanowire TFTs with metal-induced lateral crystallized poly-Si channelsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2008.920977en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume29en_US
dc.citation.issue5en_US
dc.citation.spage474en_US
dc.citation.epage476en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000255317400017-
dc.citation.woscount8-
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