完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Chia-Wen | en_US |
dc.contributor.author | Chen, Szu-Fen | en_US |
dc.contributor.author | Chang, Che-Lun | en_US |
dc.contributor.author | Deng, Chih-Kang | en_US |
dc.contributor.author | Huang, Jiun-Jia | en_US |
dc.contributor.author | Lei, Tan-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:12:14Z | - |
dc.date.available | 2014-12-08T15:12:14Z | - |
dc.date.issued | 2008-05-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.920977 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9392 | - |
dc.description.abstract | High-performance poly-Si thin-film transistors (TFTs) with 50-nm nanowire (NW) channels fabricated by integrating a simple spacer formation scheme and metal-induced-lateral-crystallization (MILC) technique are proposed. By using the sidewall spacer formation scheme, the NW channels with nanometer-scale feature sizes can be easily fabricated, exhibiting superior channel controllability through the triple-gate structure. In employing the MILC technique, the grain crystallinity of NW channels is significantly superior to that formed by the solid-phase-crystallization (SPC) technique. Therefore, the MILC NW TFT exhibits greatly improved electrical performances, including lower threshold voltage, steeper subthreshold swing, and higher field-effect mobility, as compared to those of the SPC NW TFT. Moreover, the superior threshold-voltage rolloff characteristics of MILC NW TFT are also demonstrated. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | metal-induced lateral crystallization (MILC) | en_US |
dc.subject | nanowires (NWs) | en_US |
dc.subject | thin-film transistors (TFTs) | en_US |
dc.subject | triple-gate structure | en_US |
dc.title | High-performance nanowire TFTs with metal-induced lateral crystallized poly-Si channels | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2008.920977 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 474 | en_US |
dc.citation.epage | 476 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000255317400017 | - |
dc.citation.woscount | 8 | - |
顯示於類別: | 期刊論文 |