標題: | Growth and structural characteristics of GaN/AlN/nanothick gamma-Al(2)O(3)/Si (111) |
作者: | Lee, W. C. Lee, Y. J. Tung, L. T. Wu, S. Y. Lee, C. H. Hong, M. Ng, H. M. Kwo, J. Hsu, C. H. 光電工程學系 Department of Photonics |
公開日期: | 1-May-2008 |
摘要: | The authors report on the growth of GaN by nitrogen plasma-assisted molecular beam epitaxy (MBE) on a 2 in. Si (111) substrates with a nanothick (similar to 4.8 nm thick) gamma-Al(2)O(3) as a template/buffer. A thin layer of MBE-AlN similar to 40 nm thick was inserted prior to the growth of GaN. High-resolution transmission electron microscopy (HR-TEM) and high-resolution x-ray diffraction studies indicated that both of the nanothick gamma-Al(2)O(3) and AlN are a single crystal. Reflection high-energy electron diffraction, high-resolution x-ray scattering using synchrotron radiation, and cross-sectional HR-TEM measurements indicated an orientation relationship of GaN(0002)parallel to AlN(0002)parallel to gamma-Al(2)O(3)(111)parallel to Si(111) and GaN[10-10]parallel to AlN[10-10]parallel to gamma-Al(2)O(3)[2-1-1]parallel to Si[2-1-1]. A dislocation density of 5x(10(8)-10(9))/cm(2) in the GaN similar to 0.5 mu m thick was determined using cross-sectional TEM images under weak-beam dark-field conditions. (C) 2008 American Vacuum Society. |
URI: | http://dx.doi.org/10.1116/1.2905241 http://hdl.handle.net/11536/9399 |
ISSN: | 1071-1023 |
DOI: | 10.1116/1.2905241 |
期刊: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B |
Volume: | 26 |
Issue: | 3 |
起始頁: | 1064 |
結束頁: | 1067 |
Appears in Collections: | Articles |
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