鍺電晶體之費米能階鎖定及介面反應的探討與改進

Full metadata record

DC Field	Value	Language
dc.contributor.author	荊鳳德	en_US
dc.contributor.author	CHIN ALBERT	en_US
dc.date.accessioned	2014-12-13T10:36:37Z	-
dc.date.available	2014-12-13T10:36:37Z	-
dc.date.issued	2014	en_US
dc.identifier.govdoc	NSC102-2221-E009-100-MY3	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94054	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=8105593&docId=428333	en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	鍺電晶體之費米能階鎖定及介面反應的探討與改進	zh_TW
dc.title	Ge Nmosfet Improvement by Lowering Fermi-Level Pinning and Interface Reaction	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans