Title: 超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---子計畫III:超高真空化學氣相沈積新穎複晶矽薄膜電晶體之低溫閘極介電層與新結構之研究
Study of UHVCVD Deposited Poly-Si TFTs with Low Temperature Gate Dielectric and Novel Structure
Authors: 張俊彥
CHANG CHUN-YEN
交通大學電子工程系
Keywords: 超高真空化學氣相沈積法;複晶矽;薄膜電晶體;可靠度;低溫;鈍化;退火;液晶顯示器;UHVCVD;Polysilicon;Thin film transistor (TFT);Reliability;Low temperature;Passivation;Annealing;LCD
Issue Date: 1999
Gov't Doc #: NSC88-2215-E009-048
URI: http://hdl.handle.net/11536/94061
https://www.grb.gov.tw/search/planDetail?id=428968&docId=76775
Appears in Collections:Research Plans