氫化物氣相磊晶之側向蔓延磊晶技術之研究

標題:	氫化物氣相磊晶之側向蔓延磊晶技術之研究 Investigation of the Epitaxial Lateral Overgrowth by Hydride Vapor Phase Epitaxial Growth
作者:	施敏 SZE SIMON MIN 交通大學電子工程系
關鍵字:	氫化物;選擇性成長;三五族化合物;側向蔓延成長;磊晶;Hydride;Selective growth;Ⅲ-V compound;Lateral overgrowth;Epitaxy
公開日期:	1999
官方說明文件#:	NSC88-2215-E009-038
URI:	http://hdl.handle.net/11536/94235 https://www.grb.gov.tw/search/planDetail?id=417924&docId=74127
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.