Effect of the surface treatments on the turn-on voltage of penfecene-based than-film transistors

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tsai, Shu-Ting	en_US
dc.contributor.author	Chen, Fang-Chung	en_US
dc.date.accessioned	2014-12-08T15:12:15Z	-
dc.date.available	2014-12-08T15:12:15Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9423	-
dc.description.abstract	We employed three organic polymers (PMMA, PVP, and HMDS) to modify the surface of the inorganic dielectric, SiNx. Comparing the device with different treatments, the shift of the turn on voltage has been observed. It is inferred that the shift is due to the trapped charges in the insulator and interlayer between insulator and semiconductor.	en_US
dc.language.iso	en_US	en_US
dc.title	Effect of the surface treatments on the turn-on voltage of penfecene-based than-film transistors	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	724	en_US
dc.citation.epage	727	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000258177700195	-
顯示於類別：	會議論文