8吋晶圓半導體LPCVD製程設備之研發---子計劃IV：利用LPCVD法成長Ta/sub 2/O/sub 5/薄膜與特性分析(III)

Full metadata record

DC Field	Value	Language
dc.contributor.author	曾俊元	en_US
dc.contributor.author	TSEUNG-YUENTSENG	en_US
dc.date.accessioned	2014-12-13T10:36:59Z	-
dc.date.available	2014-12-13T10:36:59Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2218-E009-004	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94323	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=418203&docId=74189	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氧化鉭	zh_TW
dc.subject	低壓化學氣相沈積法	zh_TW
dc.subject	薄膜生長	zh_TW
dc.subject	晶圓	zh_TW
dc.subject	Tantalum oxide	en_US
dc.subject	Low pressure chemical vaporization deposition (LPCVD)	en_US
dc.subject	Thin film growth	en_US
dc.subject	Wafer	en_US
dc.title	8吋晶圓半導體LPCVD製程設備之研發---子計劃IV：利用LPCVD法成長Ta/sub 2/O/sub 5/薄膜與特性分析(III)	zh_TW
dc.title	Growth and Characterization of LPCVD Ta/sub 2/O/sub 5/ Thin Films (III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans