完整后设资料纪录
DC 栏位语言
dc.contributor.author邱碧秀en_US
dc.contributor.authorCHIOU BI-SHIOUen_US
dc.date.accessioned2014-12-13T10:37:00Z-
dc.date.available2014-12-13T10:37:00Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2216-E009-012zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94335-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=418199&docId=74188en_US
dc.description.sponsorship行政院国家科学委员会zh_TW
dc.language.isozh_TWen_US
dc.subject铜金属化zh_TW
dc.subject扩散阻碍层zh_TW
dc.subject电子构装zh_TW
dc.subject电致迁移zh_TW
dc.subject应力迁移zh_TW
dc.subjectCu metallizationen_US
dc.subjectDiffusion barrier layeren_US
dc.subjectElectronic packagingen_US
dc.subjectElectromigrationen_US
dc.subjectStress migrationen_US
dc.title高密度电子构装接合与测试载具之开发---子计画II:铜接合可靠度提升之研究(III)zh_TW
dc.titleEnhanced Cu Interconnection Reliability (III)en_US
dc.typePlanen_US
dc.contributor.department交通大学电子工程系zh_TW
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