完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | 邱碧秀 | en_US |
dc.contributor.author | CHIOU BI-SHIOU | en_US |
dc.date.accessioned | 2014-12-13T10:37:00Z | - |
dc.date.available | 2014-12-13T10:37:00Z | - |
dc.date.issued | 1999 | en_US |
dc.identifier.govdoc | NSC88-2216-E009-012 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/94335 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=418199&docId=74188 | en_US |
dc.description.sponsorship | 行政院国家科学委员会 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 铜金属化 | zh_TW |
dc.subject | 扩散阻碍层 | zh_TW |
dc.subject | 电子构装 | zh_TW |
dc.subject | 电致迁移 | zh_TW |
dc.subject | 应力迁移 | zh_TW |
dc.subject | Cu metallization | en_US |
dc.subject | Diffusion barrier layer | en_US |
dc.subject | Electronic packaging | en_US |
dc.subject | Electromigration | en_US |
dc.subject | Stress migration | en_US |
dc.title | 高密度电子构装接合与测试载具之开发---子计画II:铜接合可靠度提升之研究(III) | zh_TW |
dc.title | Enhanced Cu Interconnection Reliability (III) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 交通大学电子工程系 | zh_TW |
显示于类别: | Research Plans |