P通道快閃式記憶元件在長時間寫入抹除後由熱載子導致的可靠性問題研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	莊紹勳	en_US
dc.contributor.author	Chung Steve S	en_US
dc.date.accessioned	2014-12-13T10:37:02Z	-
dc.date.available	2014-12-13T10:37:02Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-040	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94338	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=418050&docId=74155	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	快閃式記憶體	zh_TW
dc.subject	熱載子	zh_TW
dc.subject	可靠度	zh_TW
dc.subject	氧化層	zh_TW
dc.subject	耐久性	zh_TW
dc.subject	擾動	zh_TW
dc.subject	Flash memory	en_US
dc.subject	Hot carrier	en_US
dc.subject	Reliability	en_US
dc.subject	Oxided layer	en_US
dc.subject	Endurance	en_US
dc.subject	Disturbance	en_US
dc.title	P通道快閃式記憶元件在長時間寫入抹除後由熱載子導致的可靠性問題研究	zh_TW
dc.title	Hot Carrier Induced Reliability Issues in P-channel Flash Memory after Long Term P/E Cycles	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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