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dc.contributor.author莊紹勳en_US
dc.contributor.authorChung Steve Sen_US
dc.date.accessioned2014-12-13T10:37:02Z-
dc.date.available2014-12-13T10:37:02Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E009-040zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94338-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=418050&docId=74155en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject快閃式記憶體zh_TW
dc.subject熱載子zh_TW
dc.subject可靠度zh_TW
dc.subject氧化層zh_TW
dc.subject耐久性zh_TW
dc.subject擾動zh_TW
dc.subjectFlash memoryen_US
dc.subjectHot carrieren_US
dc.subjectReliabilityen_US
dc.subjectOxided layeren_US
dc.subjectEnduranceen_US
dc.subjectDisturbanceen_US
dc.titleP通道快閃式記憶元件在長時間寫入抹除後由熱載子導致的可靠性問題研究zh_TW
dc.titleHot Carrier Induced Reliability Issues in P-channel Flash Memory after Long Term P/E Cyclesen_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
Appears in Collections:Research Plans


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