介電層之化學機械拋光漿料與製程設計---子計畫III：積體電路製程中介電層薄膜之材料特性與化學機械拋光之研究

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DC Field	Value	Language
dc.contributor.author	曾偉志	en_US
dc.date.accessioned	2014-12-13T10:37:03Z	-
dc.date.available	2014-12-13T10:37:03Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2216-E006-046	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94342	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=418291&docId=74210	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	化學機械拋光法	zh_TW
dc.subject	介電質內薄膜	zh_TW
dc.subject	極大型積體電路	zh_TW
dc.subject	Chemical-mechanical polishing (CMP)	en_US
dc.subject	Intern layer dielectrics (ILD)	en_US
dc.subject	Ultra large scaling integration (ULSI)	en_US
dc.title	介電層之化學機械拋光漿料與製程設計---子計畫III：積體電路製程中介電層薄膜之材料特性與化學機械拋光之研究	zh_TW
dc.title	Materials Characteristics and Chemical-Mechanical Polishing Process of Inter-Layer Dielectric Thin Films for Integrated Circuits Fabrication	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學材料科學與工程系	zh_TW
Appears in Collections:	Research Plans

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