製作低溫(450℃)鋁閘極複晶矽薄膜電晶體之相關技術開發---鋁閘極複晶矽薄膜電晶體關鍵技術---Poly-Oxide及Al/sub 2/O/sub 3/之研究與應用(I)

Full metadata record

DC Field	Value	Language
dc.contributor.author	葉清發	en_US
dc.date.accessioned	2014-12-13T10:37:05Z	-
dc.date.available	2014-12-13T10:37:05Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-056	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94366	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=444150&docId=80429	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	複晶矽薄膜電晶體	zh_TW
dc.subject	陽極氧化	zh_TW
dc.subject	鋁閘極	zh_TW
dc.subject	複晶矽氧化膜	zh_TW
dc.subject	氧化鋁	zh_TW
dc.subject	Polysilicon TFT	en_US
dc.subject	Anodic oxidation	en_US
dc.subject	Al gate	en_US
dc.subject	Polysilicon oxide	en_US
dc.subject	Al2O3	en_US
dc.title	製作低溫(450℃)鋁閘極複晶矽薄膜電晶體之相關技術開發---鋁閘極複晶矽薄膜電晶體關鍵技術---Poly-Oxide及Al/sub 2/O/sub 3/之研究與應用(I)	zh_TW
dc.title	Study and Application of Poly-Oxide and Al/sub 2/O/sub 3/---Key Technology of Aluminum-Gate Polysilicon Thin-Film Transistors (I)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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