製作低溫(450℃)鋁閘極複晶矽薄膜電晶體之相關技術開發---鋁閘極複晶矽薄膜電晶體關鍵技術---Poly-Oxide及Al/sub 2/O/sub 3/之研究與應用(I)

標題:	製作低溫(450℃)鋁閘極複晶矽薄膜電晶體之相關技術開發---鋁閘極複晶矽薄膜電晶體關鍵技術---Poly-Oxide及Al/sub 2/O/sub 3/之研究與應用(I) Study and Application of Poly-Oxide and Al/sub 2/O/sub 3/---Key Technology of Aluminum-Gate Polysilicon Thin-Film Transistors (I)
作者:	葉清發交通大學電子工程系
關鍵字:	複晶矽薄膜電晶體;陽極氧化;鋁閘極;複晶矽氧化膜;氧化鋁;Polysilicon TFT;Anodic oxidation;Al gate;Polysilicon oxide;Al2O3
公開日期:	1999
官方說明文件#:	NSC88-2215-E009-056
URI:	http://hdl.handle.net/11536/94366 https://www.grb.gov.tw/search/planDetail?id=444150&docId=80429
Appears in Collections:	Research Plans

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