鐵電記憶體材料與製程技術開發---子計畫IV：鐵電薄膜及其電極材料之電漿蝕刻製程開發(II)

Full metadata record

DC Field	Value	Language
dc.contributor.author	江明崇	en_US
dc.date.accessioned	2014-12-13T10:37:06Z	-
dc.date.available	2014-12-13T10:37:06Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2216-E317-001	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94389	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=429112&docId=76809	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	鐵電薄膜	zh_TW
dc.subject	蝕刻速率	zh_TW
dc.subject	蝕刻輪廓	zh_TW
dc.subject	電漿蝕刻	zh_TW
dc.subject	鉑電極	zh_TW
dc.subject	Ferroelectric film	en_US
dc.subject	Etching rate	en_US
dc.subject	Etching profile	en_US
dc.subject	Plasma etching	en_US
dc.subject	Pt electrode	en_US
dc.title	鐵電記憶體材料與製程技術開發---子計畫IV：鐵電薄膜及其電極材料之電漿蝕刻製程開發(II)	zh_TW
dc.title	Plasma Etch Processing of Ferroelectric Thin Films and Electrode Materials (II)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學毫微米實驗室	zh_TW
Appears in Collections:	Research Plans