三五族氮化物半導體薄膜之物理特性研究---子計畫II：GaN類半導體材料及物理結構之薄膜製備與特性研究(III)

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DC Field	Value	Language
dc.contributor.author	陳衛國	en_US
dc.contributor.author	WEI-KUOCHEN	en_US
dc.date.accessioned	2014-12-13T10:37:08Z	-
dc.date.available	2014-12-13T10:37:08Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2112-M009-022	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94412	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=426162&docId=76095	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氮化鎵	zh_TW
dc.subject	薄膜製作	zh_TW
dc.subject	量子井	zh_TW
dc.subject	量子點	zh_TW
dc.subject	同價位元素摻雜	zh_TW
dc.subject	Gallium nitride	en_US
dc.subject	Thin film production	en_US
dc.subject	Quantum well	en_US
dc.subject	Quantum dot	en_US
dc.subject	Isoelectronic doping	en_US
dc.title	三五族氮化物半導體薄膜之物理特性研究---子計畫II：GaN類半導體材料及物理結構之薄膜製備與特性研究(III)	zh_TW
dc.title	Characterization, Growth of GaN Related Compounds and Their Heterostructures (III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
Appears in Collections:	Research Plans

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