極平整之超薄氧化層

Full metadata record

DC Field	Value	Language
dc.contributor.author	蔡中	en_US
dc.date.accessioned	2014-12-13T10:37:13Z	-
dc.date.available	2014-12-13T10:37:13Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-033	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94456	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=444364&docId=80480	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	超薄	zh_TW
dc.subject	氧化層	zh_TW
dc.subject	二氧化矽	zh_TW
dc.subject	半導體	zh_TW
dc.subject	閘極氧化層	zh_TW
dc.subject	Ultrathin	en_US
dc.subject	Oxidation layer	en_US
dc.subject	SiO2	en_US
dc.subject	Semiconductor	en_US
dc.subject	Gate oxide	en_US
dc.title	極平整之超薄氧化層	zh_TW
dc.title	Atomically Smooth Ultrathin Oxide	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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