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dc.contributor.author鄭晃忠en_US
dc.contributor.authorCHENG HUANG-CHUNGen_US
dc.date.accessioned2014-12-13T10:37:14Z-
dc.date.available2014-12-13T10:37:14Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E009-055zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94467-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=429005&docId=76783en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject雙極性電晶體zh_TW
dc.subject雙擴散金氧半導體zh_TW
dc.subject磊晶矽zh_TW
dc.subject液晶zh_TW
dc.subject驅動電路zh_TW
dc.subjectBipolar transistoren_US
dc.subjectDMOSen_US
dc.subjectEpitaxy siliconen_US
dc.subjectLiquid crystalen_US
dc.subjectDriveren_US
dc.title應用於類比電路之整合式雙極性/互補金氧半元件/擴散式金氧半元件技術之開發---子計畫II:在雙極性/互補式金氧半/雙擴散金氧半(BCD)技術中雙擴散金氧半(DMOS)之最佳化設計與製造(I)zh_TW
dc.titleOptimal DMOS Design and Fabricaion in BCD Technology (I)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
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