砷化銦/砷化鋁銦應力補償之高速電晶體

Full metadata record

DC Field	Value	Language
dc.contributor.author	蔡中	en_US
dc.date.accessioned	2014-12-13T10:37:18Z	-
dc.date.available	2014-12-13T10:37:18Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-058	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94528	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=444591&docId=80530	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	應力補償	zh_TW
dc.subject	高速電晶體	zh_TW
dc.subject	砷化銦	zh_TW
dc.subject	砷化鋁銦	zh_TW
dc.subject	量子井	zh_TW
dc.subject	Strain compensatation	en_US
dc.subject	High speed transistor	en_US
dc.subject	InAs	en_US
dc.subject	InAlAs	en_US
dc.subject	Quantum well	en_US
dc.title	砷化銦/砷化鋁銦應力補償之高速電晶體	zh_TW
dc.title	InAs/InAlAs Strain-Compensated Pseudomorphic HEMT	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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