Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 王興宗 | en_US |
| dc.date.accessioned | 2014-12-13T10:37:32Z | - |
| dc.date.available | 2014-12-13T10:37:32Z | - |
| dc.date.issued | 1999 | en_US |
| dc.identifier.govdoc | NSC88-2215-E009-022 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/94715 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=461758&docId=84663 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 光電元件 | zh_TW |
| dc.subject | 製造程序 | zh_TW |
| dc.subject | GaN | en_US |
| dc.subject | Optoelectronic device | en_US |
| dc.subject | Fabrication process | en_US |
| dc.title | 氮化鎵族光電材料與元件之研發---子計畫II：氮化鎵族光電元件製程之開發(I) | zh_TW |
| dc.title | Development of Fabrication Process for Nitride-Based Optoelectronic Devices (I) | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 交通大學光電工程研究所 | zh_TW |
| Appears in Collections: | Research Plans | |
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