遠距電漿輔助及垂直型二硫式氮化鎵磊晶表面反應之分析與研究

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DC Field	Value	Language
dc.contributor.author	李威儀	en_US
dc.contributor.author	LEE WEI-I	en_US
dc.date.accessioned	2014-12-13T10:37:49Z	-
dc.date.available	2014-12-13T10:37:49Z	-
dc.date.issued	1998	en_US
dc.identifier.govdoc	NSC87-2112-M009-005	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94882	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=369933&docId=66430	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氮化鎵	zh_TW
dc.subject	垂直型二流式磊晶系統	zh_TW
dc.subject	遠距電漿輔助磊晶	zh_TW
dc.subject	GaN	en_US
dc.subject	Vertical-type two-flow reactor	en_US
dc.subject	Plasma-enhanced deposition	en_US
dc.title	遠距電漿輔助及垂直型二硫式氮化鎵磊晶表面反應之分析與研究	zh_TW
dc.title	Studies of Surface Reactions in GaN Growths in a Two-Flow Vertical Reactor and in a Remote Plasma-Enhanced Deposition System	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
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