遠距電漿輔助及垂直型二硫式氮化鎵磊晶表面反應之分析與研究

標題:	遠距電漿輔助及垂直型二硫式氮化鎵磊晶表面反應之分析與研究 Studies of Surface Reactions in GaN Growths in a Two-Flow Vertical Reactor and in a Remote Plasma-Enhanced Deposition System
作者:	李威儀 LEE WEI-I 交通大學電子物理系
關鍵字:	氮化鎵;垂直型二流式磊晶系統;遠距電漿輔助磊晶;GaN;Vertical-type two-flow reactor;Plasma-enhanced deposition
公開日期:	1998
官方說明文件#:	NSC87-2112-M009-005
URI:	http://hdl.handle.net/11536/94882 https://www.grb.gov.tw/search/planDetail?id=369933&docId=66430
Appears in Collections:	Research Plans

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