以HVPE成長之氮化鎵單晶基板的攙雜研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	施敏	en_US
dc.contributor.author	SZE SIMON MIN	en_US
dc.date.accessioned	2014-12-13T10:37:53Z	-
dc.date.available	2014-12-13T10:37:53Z	-
dc.date.issued	1998	en_US
dc.identifier.govdoc	NSC87-2215-E009-068	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94914	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=409119&docId=72438	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氮化鎵	zh_TW
dc.subject	氫化物磊晶成長	zh_TW
dc.subject	摻雜	zh_TW
dc.subject	藍光發光二極體	zh_TW
dc.subject	基板	zh_TW
dc.subject	GaN	en_US
dc.subject	HVPE	en_US
dc.subject	Dopant	en_US
dc.subject	Blue LED	en_US
dc.subject	Substrate	en_US
dc.title	以HVPE成長之氮化鎵單晶基板的攙雜研究	zh_TW
dc.title	Research on the Dopant in GaN Substrate Grown by HVPE	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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