| 標題: | 三五族氮化合物半導體薄膜之物理特性研究---子計畫二：GaN類半導體材料及物理結構之薄膜製備與物理特性之研究(II) Characterization and Growth of GaN Related Compounds and Their Heterostructures(II) |
| 作者: | 陳衛國 WEI-KUOCHEN 交通大學電子物理系 |
| 關鍵字: | 半導體材料;薄膜;物理特性;Semiconducting material;Thin film;Physical property |
| 公開日期: | 1998 |
| 官方說明文件#: | NSC87-2112-M009-021 |
| URI: | http://hdl.handle.net/11536/94994 https://www.grb.gov.tw/search/planDetail?id=370223&docId=66503 |
| Appears in Collections: | Research Plans |
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