標題: | Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate |
作者: | Lee, Y. C. Lee, C. E. Lu, T. C. Kuo, H. C. Wang, S. C. 光電工程學系 Department of Photonics |
公開日期: | 1-四月-2008 |
摘要: | Small-scale GaN-based LEDs with a single electrode pad enjoying such properties as low cost, low series resistance, high efficiency and high yield were fabricated on a sapphire substrate by a novel and simple method. The devices present not only lower series resistance but higher light output power due to a specific n-contact design and better current spreading properties. Furthermore, higher ESD resistance (> -800 V at machine-mode operation) was demonstrated. The single-pad electrode of small-scale GaN-based LEDs has a chip size of 180 x 180 mu m(2), and showed a lower forward voltage of 3.15 V and 53.4% output power enhancement at 20 mA. |
URI: | http://dx.doi.org/10.1088/0268-1242/23/4/045013 http://hdl.handle.net/11536/9509 |
ISSN: | 0268-1242 |
DOI: | 10.1088/0268-1242/23/4/045013 |
期刊: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
Volume: | 23 |
Issue: | 4 |
結束頁: | |
顯示於類別: | 期刊論文 |