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dc.contributor.authorHsu, Shih-Hsinen_US
dc.contributor.authorLiu, En-Shaoen_US
dc.contributor.authorChang, Yia-Chungen_US
dc.contributor.authorHilfiker, James N.en_US
dc.contributor.authorKim, Young Dongen_US
dc.contributor.authorKim, Tae Jungen_US
dc.contributor.authorLin, Chun-Jungen_US
dc.contributor.authorLin, Gong-Ruen_US
dc.date.accessioned2014-12-08T15:12:23Z-
dc.date.available2014-12-08T15:12:23Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn1862-6300en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssa.200777832en_US
dc.identifier.urihttp://hdl.handle.net/11536/9511-
dc.description.abstractSpectroscopic ellipsometry (SE) is applied to characterize Si columnar nanostructures. By employing effective medium approximation (EMA) theory, Si nanorods are treated as a graded layer with each sub-layer modeled as a mixture of Si and voids with varying porosity fraction. In addition, the rigorous coupled-wave analysis and finite-element Green's function method were used in modeling Si nanorods as a stack of disks with varying diameters and thicknesses, and the calculations are in satisfactory agreement with the measurement results. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.language.isoen_USen_US
dc.titleCharacterization of Si nanorods by spectroscopic ellipsometry with efficient theoretical modelingen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssa.200777832en_US
dc.identifier.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEen_US
dc.citation.volume205en_US
dc.citation.issue4en_US
dc.citation.spage876en_US
dc.citation.epage879en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000255702600037-
dc.citation.woscount19-
Appears in Collections:Articles


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