標題: GaN p-i-n photodetectors with an LT-GaN interlayer
作者: Lin, J. C.
Su, Y. K.
Chang, S. J.
Lan, W. H.
Huang, K. C.
Chen, W. R.
Lan, C. H.
Huang, C. C.
Lin, W. J.
Cheng, Y. C.
電子物理學系
Department of Electrophysics
公開日期: 1-Apr-2008
摘要: Nitride-based p-i-n ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interlayer were proposed and fabricated. Compared with a conventional GaN p-i-n photodetector, it was found that both the dark current and ideality factor of the p-i-n photodetector with an LT-GaN interlayer became larger whereas the UV-to-visible rejection ratio became smaller because of the poor crystal quality of the LT-GaN interlayer. However, the responsivity of the GaN p-i-n photocletector with an LT-GaN interlayer was larger than that of the conventional GaN p-i-n photocletector under a high reverse bias because of the carrier multiplication effect and/or internal gain that originated from the defect levels.
URI: http://dx.doi.org/10.1049/iet-opt:20070057
http://hdl.handle.net/11536/9514
ISSN: 1751-8768
DOI: 10.1049/iet-opt:20070057
期刊: IET OPTOELECTRONICS
Volume: 2
Issue: 2
起始頁: 59
結束頁: 62
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