標題: | Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional Poisson's equation |
作者: | Wu, Yu-Sheng Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | multi-gate MOSFETs;FinFET;tri-gate;3-D Poisson's equation;random dopant fluctuation |
公開日期: | 1-四月-2008 |
摘要: | This paper investigates the random dopant fluctuation of multi-gate metal-oxide-semi conductor field-effect transistors (MOSFETs) using analytical solutions of three-dimensional (3D) Poisson's equation verified with device simulation. Especially, we analyze the impact of aspect ratio on the random dopant fluctuation in multi-gate devices. Our study indicates that with a given total width, lightly doped fin-type FET (FinFET) shows the smallest threshold voltage (V(th)) dispersion because of its smaller Vth sensitivity to the channel doping. For heavily doped devices, quasi-planar shows smaller V(th) dispersion because of its larger volume. The Vth dispersion caused by random dopant fluctuation may still be significant in the lightly doped channel, especially for tri-gate and quasi-planar devices. |
URI: | http://dx.doi.org/10.1143/JJAP.47.2097 http://hdl.handle.net/11536/9530 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.47.2097 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 47 |
Issue: | 4 |
起始頁: | 2097 |
結束頁: | 2102 |
顯示於類別: | 期刊論文 |