| 標題: | 光電及量子元件之研究 Study on Optoelectronic and Quantum Device |
| 作者: | 張俊彥 CHANG CHUN-YEN 交通大學電子工程研究所 |
| 關鍵字: | 應變量子井雷射;電子束直寫;磷化銦鎵;砷磷化銦鎵;氮化鎵;Strained quantum-well laser;Electron-beam direct writing;GaInP;GaInAsP;GaN |
| 公開日期: | 1997 |
| 官方說明文件#: | NSC86-2215-E009-018 |
| URI: | http://hdl.handle.net/11536/95359 https://www.grb.gov.tw/search/planDetail?id=278660&docId=50167 |
| Appears in Collections: | Research Plans |
- GaN/AlGaN和InGaN/AlInGaN多量子井雷射二極體之模擬最佳化主動層研究 / 蘇柏源;Po-Yuan Su;郭浩中;盧廷昌;H.C. Kuo
- Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers / Kuo, Y. -K.;Chen, J. -R.;Chen, M. -L.;Liou, B. -T.
- Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well / Wang, PY;Chen, JF;Wang, JS;Chen, NC;Chen, YS
- 半極性與非極性氮化鎵之寬能隙材料及光電元件研究---子計畫二：半極性或非極性氮化鎵新穎奈米光子元件之研究 / 盧廷昌;Lu Tien-chang
- GaN/GaInN量子結構及藍紫光雷射二極體研究 / 李威儀;LEE WEI-I
Loading...