高密度電子構裝接合與測試載具之開發---銅接合可靠度提升之研究---以氮化鈦為界面接層之銅電遷移現象之研究(I)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	邱碧秀	en_US
dc.contributor.author	CHIOU BI-SHIOU	en_US
dc.date.accessioned	2014-12-13T10:38:28Z	-
dc.date.available	2014-12-13T10:38:28Z	-
dc.date.issued	1997	en_US
dc.identifier.govdoc	NSC86-2221-E009-062	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/95418	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=271898&docId=48498	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	銅金屬化	zh_TW
dc.subject	電子構裝	zh_TW
dc.subject	擴散障礙層	zh_TW
dc.subject	電子遷移	zh_TW
dc.subject	Cu metallization	en_US
dc.subject	Electronic package	en_US
dc.subject	Difussion barrier layer	en_US
dc.subject	Electromigration	en_US
dc.title	高密度電子構裝接合與測試載具之開發---銅接合可靠度提升之研究---以氮化鈦為界面接層之銅電遷移現象之研究(I)	zh_TW
dc.title	Enhanced Cu Interconnection Reliability --- Electromigration of Cu with TiN as Interfacial Bonding Layer(I)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程研究所	zh_TW
顯示於類別：	研究計畫