有機金屬氣相磊晶法成長砷化銦鎵與砷化銦量子點特性研究

Title:	有機金屬氣相磊晶法成長砷化銦鎵與砷化銦量子點特性研究 Study the Characteristics of InGaAs and InAs Quantum Dots Grown by MOCVD
Authors:	李威儀 LEE WEI-I 國立交通大學電子物理學系
Keywords:	砷化銦鎵;砷化銦;量子點;有機金屬氣相磊晶法;InGaAs;InAs;Quantum dot;MOCVD
Issue Date:	2001
Gov't Doc #:	NSC90-2112-M009-041
URI:	http://hdl.handle.net/11536/95476 https://www.grb.gov.tw/search/planDetail?id=639680&docId=119712
Appears in Collections:	Research Plans

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