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dc.contributor.author莊振益en_US
dc.date.accessioned2014-12-13T10:38:46Z-
dc.date.available2014-12-13T10:38:46Z-
dc.date.issued1996en_US
dc.identifier.govdocNSC85-2112-M009-038-PHzh_TW
dc.identifier.urihttp://hdl.handle.net/11536/95658-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=239629&docId=44317en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject覆蓋層zh_TW
dc.subject超導薄膜zh_TW
dc.subject腔內補償裝置zh_TW
dc.subject即時雙鎗交流濺鍍系統zh_TW
dc.subject維度各向異性zh_TW
dc.subject臨界電流密度zh_TW
dc.subjectCapsulation layeren_US
dc.subjectSuperconducting thin filmen_US
dc.subjectIn-chamber compensation setupen_US
dc.subjectDual-gun in-situ RF sputteringen_US
dc.subjectDimensionality anisotropyen_US
dc.subjectCritical currentdensityen_US
dc.title薄膜超導元件的研制與特性探討---子計畫四:鉈系1223相超導薄膜之製備與特性研究(II)zh_TW
dc.titleA Study on the Fabrication and Properties of Tl-1223 Superconducting Thin Films(II)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子物理學系zh_TW
顯示於類別:研究計畫