標題: Improvement of electrical characteristics for fluorine-ion implanted poly-Si TFTs using Pr2O3 gate dielectric
作者: Chang, Chia-Wen
Huang, Jiun-Jia
Chang, Hong-Ren
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: High-performance fluorine-ion-implanted poly-Si thin-film transistors with high-k Pr2O3 gate dielectric are demonstrated for the first time. Experimental results have shown that the fluorine-doped poly-Si channel would effectively minimize the trap state densities, leading to improved electrical characteristics even without any hydrogenation process or advanced crystallization techniques. In addition, the presence of fluorine in poly-Si TFT obviously exhibits superior electrical reliability. This unique low cost, and effective fluorine ion implantation technique makes the Pr2O3 gate dielectric TFT very suitable for low power peripheral driving circuit applications.
URI: http://hdl.handle.net/11536/9568
期刊: IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
起始頁: 473
結束頁: 476
Appears in Collections:Conferences Paper