超薄氧化層高等可靠性物理暨次世代快閃式記憶體之前瞻性研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	陳明哲	en_US
dc.contributor.author	CHEN MING-JER	en_US
dc.date.accessioned	2014-12-13T10:38:50Z	-
dc.date.available	2014-12-13T10:38:50Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2218-E009-043	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/95765	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=682105&docId=130199	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	超薄氧化層	zh_TW
dc.subject	可靠性物理	zh_TW
dc.subject	快閃記憶體	zh_TW
dc.subject	Ultrathin oxide	en_US
dc.subject	Reliability physics	en_US
dc.subject	Flash memory	en_US
dc.title	超薄氧化層高等可靠性物理暨次世代快閃式記憶體之前瞻性研究	zh_TW
dc.title	Pioneering Study on Ultrathin Oxide Advanced Reliability Physics and Next-Generation Flash Memory	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程研究所	zh_TW
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.