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dc.contributor.author崔燕勇en_US
dc.date.accessioned2014-12-13T10:38:50Z-
dc.date.available2014-12-13T10:38:50Z-
dc.date.issued1996en_US
dc.identifier.govdocNSC85-2212-E009-032zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/95782-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=230694&docId=41961en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject化學蒸汽堆積法zh_TW
dc.subject薄膜單晶成長zh_TW
dc.subject數值模擬zh_TW
dc.subjectChemical vapor depositionen_US
dc.subjectThin film single crystal growthen_US
dc.subjectNumericalsimulationen_US
dc.title單晶CVD薄膜和熔化成長法製成中之不穩定熱流與使其穩定之研究---子計畫二:薄膜單晶成長之垂直式CVD反應器內流動與熱傳之數值研究 (I)zh_TW
dc.titleNumerical Study of Flow and Heat Transfer in Vertical CVD Reactor of Thin Film Single Crystal Growth(I)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學機械工程學系zh_TW
Appears in Collections:Research Plans