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dc.contributor.author李威儀en_US
dc.contributor.authorLEE WEI-Ien_US
dc.date.accessioned2014-12-13T10:39:01Z-
dc.date.available2014-12-13T10:39:01Z-
dc.date.issued1996en_US
dc.identifier.govdocNSC85-2112-M009-016zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/95982-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=236171&docId=43509en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject深能暫態系統zh_TW
dc.subject深植能缺陷zh_TW
dc.subjectGaAsPzh_TW
dc.subjectGaInPzh_TW
dc.subjectDeep level transient spectorscopyen_US
dc.subjectDetecten_US
dc.subjectGaAsPen_US
dc.subjectGaInPen_US
dc.subjectDLTSen_US
dc.title具有梯狀導波管之虛陰極振盪器線路理論分析研究zh_TW
dc.titleDeep Level Transient Spectroscopy Signature Analysis of Te-Doped Center in GaAsP and InGaPen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子物理學系zh_TW
Appears in Collections:Research Plans