Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 莊紹勳 | en_US |
dc.contributor.author | Chung Steve S | en_US |
dc.date.accessioned | 2014-12-13T10:39:03Z | - |
dc.date.available | 2014-12-13T10:39:03Z | - |
dc.date.issued | 1996 | en_US |
dc.identifier.govdoc | NSC85-2215-E009-053 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/96020 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=218534&docId=38692 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 快閃式記憶元件熱電子效應的可靠性分析 | zh_TW |
dc.title | Analysis of Hot Electron Induced Reliability of Flash Memories | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子工程學系 | zh_TW |
Appears in Collections: | Research Plans |